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DISCRETE SEMICONDUCTORS
DATA SHEET
BSN254 BSN254A N-channel enhancement mode vertical D-MOS transistors
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
DESCRIPTION N-channel enhancement mode vertical D-MOS transistors in TO-92 variant envelope and designed for use as line current interrupters in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES * Direct interface to C-MOS, TTL, etc. * High-speed switching * No second breakdown * Low RDS (on) PINNING (BSN254) 1 = gate 2 = drain 3 = source PINNING (BSN254A) 1 = source 2 = gate 3 = drain PIN CONFIGURATION - TO-92 VARIANT QUICK REFERENCE DATA Drain-source voltage Drain current (DC) Total power dissipation up to Tamb = 25 C Drain-source on-resistance ID = 300 mA; VGS = 10 V Gate-source threshold voltage RDS(on) VGS(th) VDS ID Ptot
BSN254 BSN254A
max. max. max. typ. max. max.
250 V 300 mA 1W 5.0 7.0 2V
handbook, halfpage
d
1 2 3 g
MAM146
s
Note: Various pinnings are available on request.
Fig.1 Simplified outline and symbol.
April 1995
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Drain current (peak) Total power dissipation up to Tamb = 25 C (note 1) Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient (note 1) Note Rth j-a = VDS VGSO ID IDM Ptot Tstg Tj max. max. max. max. max. max.
BSN254 BSN254A
250 V 20 V 300 mA 1.2 A 1W 150 C
-65 to + 150 C
125 K/W
1. Device mounted on printed-circuit board, max. lead length 4 mm, mounting pad for drain lead min. 10 mm x 10 mm. CHARACTERISTICS Tj = 25 C unless otherwise specified Drain-source breakdown voltage ID = 10 A; VGS = 0 Drain-source leakage current VDS = 200 V; VGS = 0 Gate-source leakage current VGS = 20 V; VDS = 0 Gate threshold voltage ID = 1 mA; VDS = VGS Drain-source on-resistance ID = 300 mA; VGS = 10 V ID = 20 mA; VGS = 2.4 V Transfer admittance ID = 300 mA; VDS = 25 V Input capacitance at f = 1 MHz VDS = 25 V; VGS = 0 Ciss typ. max. 65 pF 90 pF Yfs min. typ. 200 mS 400 mS RDS (on) RDS(on) typ. max. max. VGS(th) min. max. 0.8 V 2.0 V 5.0 7.0 10 IGSS max. 100 nA IDSS max. 1 A V(BR) DSS min. 250 V
April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
Output capacitance at f = 1 MHz VDS = 25 V; VGS = 0 Feedback capacitance at f = 1 MHz VDS = 25 V; VGS = 0 Switching times (see Figs 2 and 3) ID = 250 mA; VDD = 50 V; VGS = 0 to 10 V ton typ. max. typ. max. Crss typ. max. Coss typ. max.
BSN254 BSN254A
20 pF 30 pF
5 pF 15 pF
5 ns 10 ns 20 ns 30 ns
toff
handbook, halfpage
VDD = 50 V
handbook, halfpage
90 %
INPUT 10 %
10 V 0V ID 50
MSA631
90 % OUTPUT 10 % ton toff
MBB692
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
handbook, halfpage
1.2
MRC238
handbook, halfpage
2
MDA712
Ptot (W) 0.8
ID (A) 1.6
VGS = 10 V 6V 5V
1.2 4V 0.8 0.4 0.4 3V
0 0 50 100 150 200 Tamb (C)
2V 0 0 2 4 6 8 10 VDS (V)
Fig.4 Power derating curve.
Fig.5
Output characteristics; Tj = 25 C; typical values.
April 1995
4
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
BSN254 BSN254A
handbook, halfpage
2
MDA713
ID (A) 1.6
104 handbook, halfpage ID (mA) 103 VGS = 10 V 5V 4V 3V
MDA714
1.2
0.8 102 0.4
0 0 2 4 6 8 10 VGS (V)
10
0
4
8
12 16 RDSon ()
Fig.6
Transfer characteristic; VDS = 10 V; Tj = 25 C; typical value.
Fig.7
On-resistance as a function of drain current; Tj = 25 C; typical values.
handbook, halfpage
200 C (pF)
MDA715
handbook, halfpage
1.4 k 1.2
MDA716
160
120 1 80 Ciss 0.8 40 Coss Crss 0 0 5 10 15 20 25 VDS (V) 0.6 -50 0 50 100 Tj (C) 150
Fig.9 Fig.8 Capacitances as a function of drain-source voltage; VGS = 0; f = 1 MHz; Tj = 25 C; typical values. V GS(th) at T j k = --------------------------------------- ; V GS(th) at 25 C VGS(th) at 1 mA; typical values
April 1995
5
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
BSN254 BSN254A
2.8 k 2.4
MDA717
2
(1) (2)
1.6
1.2
0.8
0.4 -50
0
50
100
Tj (C)
150
Fig.10 R DS ( on ) at T j -; k = ------------------------------------------R DS (on) at 25 C typical values.
April 1995
6
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
PACKAGE OUTLINES Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
BSN254 BSN254A
SOT54 variant
c
L2
E d A L b
1 2
D e1 e
3
b1
L1
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm Notes 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 variant REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-04-14 A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) max 2.5 L2 max 2.5
April 1995
7
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS
BSN254 BSN254A
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
April 1995
8
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
NOTES
BSN254 BSN254A
April 1995
9
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
NOTES
BSN254 BSN254A
April 1995
10
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
NOTES
BSN254 BSN254A
April 1995
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137107/00/01/pp12
Date of release: April 1995
Document order number:
9397 750 02462

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